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  • 1
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 4S ( 1995-04-01), p. 2191-
    Kurzfassung: Surface reactions of H 2 O-adsorbed Si(100) with atomic hydrogen and oxygen have been examined by high-resolution electron energy loss spectroscopy (HREELS). The surface with saturated coverage of H 2 O is terminated by H and OH species and the sticking probability of H 2 O is estimated to be 0.9. This surface is stable for the adsorption of molecular oxygen at room temperature. The presence of dissociation sites of oxygen molecules such as dangling bonds is considered to be essential to the oxidation of Si(100) surfaces. By the reaction of H 2 O-adsorbed Si(100) with atomic hydrogen, the uptake of oxygen atoms of Si-OH bonds into sites of Si back bonds occurs even at room temperature.
    Materialart: Online-Ressource
    ISSN: 0021-4922 , 1347-4065
    RVK:
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    Sprache: Unbekannt
    Verlag: IOP Publishing
    Publikationsdatum: 1995
    ZDB Id: 218223-3
    ZDB Id: 797294-5
    ZDB Id: 2006801-3
    ZDB Id: 797295-7
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  • 2
    Online-Ressource
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    IOP Publishing ; 1997
    In:  Japanese Journal of Applied Physics Vol. 36, No. 12S ( 1997-12-01), p. 7665-
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 12S ( 1997-12-01), p. 7665-
    Kurzfassung: The influences of hydrogen atoms on the Si 1- x Ge x heteroepitaxial growth on Si(100) and Si(111) surfaces using Si 2 H 6 - and GeH 4 -source molecular beam epitaxy (MBE) with additional atomic hydrogen has been studied using reflection high energy electron diffraction (RHEED). In the Si 1- x Ge x growth on Si(100) and Si(111) surfaces, it is found that the dissociative adsorption rates of Si 2 H 6 and GeH 4 are significantly dependent upon the surface orientation and the atomic element at the adsorption sites. The role of atomic hydrogen irradiation in the growth rate of Si 1- x Ge x on Si(100) and Si(111) surfaces is to reduce the density of adsorption sites for the hydride gases and to suppress the surface segregation of Ge atoms. However, the altered behavior in the growth rate of Si 1- x Ge x on Si(100) and Si(111) is observed due to the difference in the adsorption rates of the gaseous hydrides.
    Materialart: Online-Ressource
    ISSN: 0021-4922 , 1347-4065
    RVK:
    RVK:
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    Sprache: Unbekannt
    Verlag: IOP Publishing
    Publikationsdatum: 1997
    ZDB Id: 218223-3
    ZDB Id: 797294-5
    ZDB Id: 2006801-3
    ZDB Id: 797295-7
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 3
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 12S ( 1998-12-01), p. 6970-
    Kurzfassung: The influences of hydrogen atoms on Ge heteroepitaxial growth on Si(111) surfaces using solid phase epitaxy (SPE) have been investigated by scanning tunneling microscopy (STM). In the SPE growth of Ge films on H-terminated Si(111) surfaces, the formation of 3-dimensional (3D) Ge islands are suppressed. With the desorption of H atoms, the 3D islands appear on the Ge surface, which are considered to be formed by the agglomeration of Ge atoms. The density of the islands is decreased and the size of the islands is increased by the existence of Si-H bonding at the Ge/Si interface. These phenomena are considered to be caused by the release of the stress in the Ge film and the weakening of the interaction between the Ge film and the Si substrate by Si–H bonding. In addition, the activation energy of the migration of Ge atoms during the agglomeration is determined to be 0.3 eV.
    Materialart: Online-Ressource
    ISSN: 0021-4922 , 1347-4065
    RVK:
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    Sprache: Unbekannt
    Verlag: IOP Publishing
    Publikationsdatum: 1998
    ZDB Id: 218223-3
    ZDB Id: 797294-5
    ZDB Id: 2006801-3
    ZDB Id: 797295-7
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  • 4
    Online-Ressource
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    IOP Publishing ; 1994
    In:  Japanese Journal of Applied Physics Vol. 33, No. 12S ( 1994-12-01), p. 7190-
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 12S ( 1994-12-01), p. 7190-
    Kurzfassung: The carrier transport phenomena of p-Si wires on n-Si(100) substrates fabricated by selective ion implantation using focused Ga + ion beams have been examined. We have successf ully controlled the electrical conduction in p-Si wires by changing doses and annealing temperatures, and found that three kinds of electrical conduction mechanisms, namely metallic conduction, one-dimensional variable-range-hopping (1D-VRH) conduction and nearest-neighbor-hopping (NNH) conduction, can be observed below 70 K. The 1D-VRH conduction is observed in samples with doses of 3.5 to 5.6× 10 9 cm -1 at annealing temperatures of 600 to 690°C and the NNH conduction in samples under the conditions of lower doses or higher temperatures. In these systems, negative magnetoresistance is observed in the NNH conduction and positive magnetoresistance in the VRH conduction. The density of localized states per unit energy in a localization length at the Fermi level, ρ F α -1 , is estimated to be 200–300 eV -1 in the VRH conduction.
    Materialart: Online-Ressource
    ISSN: 0021-4922 , 1347-4065
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    Sprache: Unbekannt
    Verlag: IOP Publishing
    Publikationsdatum: 1994
    ZDB Id: 218223-3
    ZDB Id: 797294-5
    ZDB Id: 2006801-3
    ZDB Id: 797295-7
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  • 5
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 2S ( 1996-02-01), p. 1069-
    Kurzfassung: The initial oxidation processes of H-terminated Si(100)-1×1 surfaces have been investigated using high-resolution electron energy loss spectroscopy at room temperature and 300°C. It has been found that oxygen atoms adsorb on one of the two back-bond sites of a surface Si atom until the oxygen coverage is 0.4 and in the sequential oxidation process, other adsorption sites such as the other back-bond sites and/or Si–Si dimer-bond sites, become occupied by oxygen atoms. The structural relaxation in Si–O–Si bonds is observed when a surface Si atom has two Si–O bonds, and is considered to originate from the change in the force constant of Si–O bonds.
    Materialart: Online-Ressource
    ISSN: 0021-4922 , 1347-4065
    RVK:
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    Sprache: Unbekannt
    Verlag: IOP Publishing
    Publikationsdatum: 1996
    ZDB Id: 218223-3
    ZDB Id: 797294-5
    ZDB Id: 2006801-3
    ZDB Id: 797295-7
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 6
    Online-Ressource
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    IOP Publishing ; 1995
    In:  Japanese Journal of Applied Physics Vol. 34, No. 2S ( 1995-02-01), p. 741-
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 2S ( 1995-02-01), p. 741-
    Kurzfassung: Effects of H-termination of Si(100) surfaces on electrical characteristics of Hf/p-Si interfaces have been examined. It is confirmed by high-resolution electron energy loss spectroscopy (HREELS) and X-ray photoelectron spectroscopy (XPS) that the H-terminated surface, prepared by wet treatments in HF and then in water, is very stable for native oxidation and adsorption of oxygen. Effective dielectric layer thicknesses of H-terminated Hf/p-Si interfaces are 1/4-1/3 smaller than those of nonterminated ones, and the ideality factors in current-voltage characteristics are very close to unity. Deep levels at E v +0.14, E v +0.43 and E v +0.52 eV are observed for 460° C-annealed diodes by deep-level transient spectroscopy (DLTS), the densities of which are reduced below the detection limit by annealing at 580° C. It can be concluded that the H-termination is markedly effective in improving electrical characteristics of Hf/p-Si interfaces.
    Materialart: Online-Ressource
    ISSN: 0021-4922 , 1347-4065
    RVK:
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    Sprache: Unbekannt
    Verlag: IOP Publishing
    Publikationsdatum: 1995
    ZDB Id: 218223-3
    ZDB Id: 797294-5
    ZDB Id: 2006801-3
    ZDB Id: 797295-7
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 7
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 1R ( 2001-01-01), p. 269-
    Kurzfassung: Epitaxial growth of 20-nm-thick CoSi 2 films on Si(001) surfaces has been investigated for a two-step growth and reactive deposition epitaxy (RDE) at growth temperatures of 320–680°C using in-situ reflection high-energy electron diffraction and scanning tunneling microscopy, and ex-situ X-ray diffraction and atomic force microscopy. For the RDE, three-dimensional CoSi 2 islands with a {115}-faceted structure grow along the 〈 110 〉 directions and pinholes or channels with depths over ∼20 nm are formed. However, for the two-step growth, no {115}-faceted islands exist and the depth of pinholes or channels decreases greatly. In the two-step growth, cobalt is solely deposited at an elevated substrate temperature on an epitaxial CoSi 2 (001) film formed by solid-phase epitaxy of 0.23-nm-thick Co as the first step. The first-step CoSi 2 film has effects on restraining the Si diffusion from the substrate at the pinhole sites and promoting the layer-by-layer growth at the second step. The original two-step growth technique will be highly suitable for the realization of high-quality epitaxial CoSi 2 contacts in the future ULSI technology.
    Materialart: Online-Ressource
    ISSN: 0021-4922 , 1347-4065
    RVK:
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    Sprache: Unbekannt
    Verlag: IOP Publishing
    Publikationsdatum: 2001
    ZDB Id: 218223-3
    ZDB Id: 797294-5
    ZDB Id: 2006801-3
    ZDB Id: 797295-7
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  • 8
    Online-Ressource
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    IOP Publishing ; 1997
    In:  Japanese Journal of Applied Physics Vol. 36, No. 6S ( 1997-06-01), p. 4046-
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 6S ( 1997-06-01), p. 4046-
    Kurzfassung: We have investigated the single-electron phenomena in p-Si hopping conduction systems with a gate electrode. The hopping conduction systems have been fabricated on Si(100) substrates by focused ion beam (FIB) implantation of Ga + ions with a beam diameter of 0.1 µ m. The samples show nearest-neighbor hopping (NNH) conduction below 30 K and the conductance is found to oscillate by changing the gate voltage in the NNH conduction region. From the period of conductance oscillation, the gate capacitance is estimated to be about 0.3–0.4 aF. The evaluated size of a dot based on the capacitance is close to the dimension of localized states in this hopping conduction system. A plateau is also observed in current-voltage characteristics between source and drain electrodes. It is considered that these phenomena originate from a Coulomb blockade and that the chain of localized hopping states acts as asymmetric multiple tunneling junctions.
    Materialart: Online-Ressource
    ISSN: 0021-4922 , 1347-4065
    RVK:
    RVK:
    RVK:
    Sprache: Unbekannt
    Verlag: IOP Publishing
    Publikationsdatum: 1997
    ZDB Id: 218223-3
    ZDB Id: 797294-5
    ZDB Id: 2006801-3
    ZDB Id: 797295-7
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 9
    Online-Ressource
    Online-Ressource
    IOP Publishing ; 1996
    In:  Japanese Journal of Applied Physics Vol. 35, No. 2S ( 1996-02-01), p. 1593-
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 2S ( 1996-02-01), p. 1593-
    Kurzfassung: The oxide formation on Si(100)-2×1 surfaces at room temperature has been studied by scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). The change in electronic structures due to oxidation has been discussed based on the spatially resolved STS spectra. It was found in the initial stage of oxidation that the local density-of-states (LDOS) of back bond states and dangling bond sites decreases dramatically at the oxidation-induced bright protrusions. The STS spectra of the 2×1 region with an oxygen exposure of 4.5 L suggest that oxygen atoms adsorb on the back bond sites. At the average SiO 2 thickness of 0.4 nm, the surface states of Si(100)-2×1 vanish completely and the energy width of the gap near the Fermi level becomes very close to the band gap of bulk Si. In addition, the observed LDOS is spatially uniform in spite of the presence of bumps in the STM image. The STS spectra indicate the formation of the valence band and the conduction band of SiO 2 at the oxide thickness of 0.4 nm.
    Materialart: Online-Ressource
    ISSN: 0021-4922 , 1347-4065
    RVK:
    RVK:
    RVK:
    Sprache: Unbekannt
    Verlag: IOP Publishing
    Publikationsdatum: 1996
    ZDB Id: 218223-3
    ZDB Id: 797294-5
    ZDB Id: 2006801-3
    ZDB Id: 797295-7
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 10
    In: Renal Replacement Therapy, Springer Science and Business Media LLC, Vol. 7, No. 1 ( 2021-12)
    Kurzfassung: This article is a duplicated publication from the Japanese version of “2019 JSDT Guidelines for Peritoneal Dialysis” with permission from the Japanese Society for Dialysis Therapy (JSDT). This clinical practice guideline (CPG) was developed primarily by the Working Group on Revision of Peritoneal Dialysis (PD) Guidelines of the Japanese Society for Dialysis Therapy. Recently, the definition and creation process for CPGs have become far more rigorous; traditional methods and formats no longer adhere to current standards. To improve the reliability of international transmission of our findings, CPGs are created in compliance with the methodologies developed by the Grading of Recommendations, Assessment, Development and Evaluation (GRADE) working group. Part 2 of this PD guideline is the first CPG developed by our society that conforms to the GRADE approach. Methods Detailed processes were created in accordance with the Cochrane handbook and the GRADE approach developed by the GRADE working group. Results Clinical question (CQ)1: Is the use of renin-angiotensin system inhibitors (RAS inhibitors), such as angiotensin-converting enzyme inhibitors (ACEI) and angiotensin receptor blockers (ARB ) , effective in PD patients? Recommendation: We suggest the usage of RAS inhibitors (ACEI and ARB) in PD patients (GRADE 2C). CQ2: Icodextrin or glucose solution: which is more useful as a dialysate among patients with PD? Recommendation: We suggest using icodextrin when managing body fluids in PD patients (GRADE 2C). CQ3: Is it better to apply or not apply mupirocin/gentamicin ointment to the exit site? Recommendation: We suggest not applying mupirocin/gentamicin ointment to the exit sites of PD patients (GRADE 2C). CQ4: Which surgical approach is more desirable when a PD catheter is placed, open surgery or laparoscopic surgery? No recommendation. CQ5: Which administration route of antibiotics is better in PD patients with peritonitis, intravenous or intraperitoneal? Recommendation: We suggest intraperitoneal administration of antibiotics in PD patients with peritonitis (GRADE 2C). Note: The National Insurance does not currently cover intraperitoneal administration. CQ6: Is peritoneal dialysis or hemodialysis better as the first renal replacement therapy in diabetic patients? No recommendation. Conclusions In the future, we suggest that society members construct their own evidence to answer CQs not brought up in this guideline, and thereby show the achievements of Japan worldwide.
    Materialart: Online-Ressource
    ISSN: 2059-1381
    Sprache: Englisch
    Verlag: Springer Science and Business Media LLC
    Publikationsdatum: 2021
    ZDB Id: 2866852-2
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