In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 2B ( 2000-02-01), p. L143-
Abstract:
The effects of isoelectronic In-doping on the structural and optical properties of GaN/Al 0.17 Ga 0.83 N and Al 0.05 Ga 0.95 N/Al 0.17 Ga 0.83 N quantum wells (QWs) on GaN were investigated. QWs were grown by atmospheric pressure metalorganic vapor phase epitaxy with either H 2 or N 2 carrier gas. Without In-doping, QWs grown in N 2 carrier gas had highly superior crystalline and optical properties than those grown in H 2 carrier gas. X-ray diffraction and photoluminescence studies revealed that In-doping improves the crystalline and optical properties of QWs, irrespective of the carrier gas species used during growth. These improvements are more remarkable for In-doping into the well layers rather than into the barrier layers.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.L143
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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