In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 1R ( 1999-01-01), p. 213-
Abstract:
In the case of a reaction between carbon particles and SiO films, silicon carbide was produced by heating above 900°C by the diffusion of Si atoms from Si crystals in SiO films into carbon particles. In the case of that between Si particles and carbon films, silicon carbide was produced above room temperature by the diffusion of carbon atoms into Si particles. In the above two cases, the direction of atom diffusion during the reaction was different.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1999
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Permalink