In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 22, No. 3 ( 2004-05-01), p. 1367-1371
Abstract:
In this article, we describe the improvement in cold emission characteristics of a device termed HEED (high efficiency electro-emission device) by optimizing the emission site structures. The advanced HEED consists of a bottom electrode, a Si layer, a SiOx layer, a top electrode, and a carbon layer. The electron emission properties were significantly improved by appropriately arranging emission sites of “dimplelike” forms with a diameter of 1 μm on the device surface. The applied voltage was significantly lowered to 20 V (1/5 of that in the previously reported HEED), and a high emission current density of 1.8 mA/cm2 was obtained at a applied voltage of 20 V with an electron emission efficiency of 1% under a pulse operation. The energy distribution measurement of emitted electrons showed that the device emits considerably high-energy electrons as compared with conventional field emitters. Using this emitter as an excitation source, a 4 in. prototype flat display panel has been fabricated with a vacuum spacing of 9 mm between glass substrates. The panel operates well at a practical brightness of 2000 cd/m2.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2004
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
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