In:
Journal of the Society for Information Display, Wiley, Vol. 23, No. 8 ( 2015-08), p. 384-390
Abstract:
In this work, we investigate the enhanced performance of amorphous indium zinc oxides‐based thin film transistors with hafnium silicate (HfSiO x ) gate insulators. HfSiO x gate insulators annealed at various conditions are deposited by cosputtering of hafnium oxide and Si. The structural properties of HfSiO x are investigated using the atomic force microscopy, X‐ray diffraction, and x‐ray photoelectron spectroscopy (XPS). techniques. Furthermore, the electrical characteristics of HfSiO x are analyzed to investigate the effect of annealing conditions. We obtain optimal results for thin film transistors with HfSiO x gate insulators annealed for 1 h at 100 °C, with a saturation mobility of 1.2 cm 2 /V · s, threshold voltage of 2.2 V, on current/off current ratio of 2.0 × 10 6 , and an insulator surface roughness of 0.187 nm root mean square.
Type of Medium:
Online Resource
ISSN:
1071-0922
,
1938-3657
Language:
English
Publisher:
Wiley
Publication Date:
2015
detail.hit.zdb_id:
2190777-8
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