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  • 1
    Online Resource
    Online Resource
    Analysis of Fluorocarbon Deposition during SiO 2 Etching
    IOP Publishing ; 1996
    In:  Japanese Journal of Applied Physics Vol. 35, No. 4S ( 1996-04-01), p. 2463-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 4S ( 1996-04-01), p. 2463-
    Abstract: Fluorocarbon film deposition during SiO 2 etching affects etching profile and etch selectivity with respect to the photoresist and the underlayer. The fluorocarbon deposition rate with and without ion irradiation is investigated by employing a pair of permanent magnets on the wafer. From the result of this experiment, film deposition rate is almost 0 in the absence of ion irradiation. X-ray photoelectron spectroscopy analysis indicates that ion irradiation suppresses the fluorine/carbon ratio. We discuss the possibility of ion deposition and ion-assisted polymerization. We also investigate the amounts of adsorbed particles using a quadrupole mass spectrometer.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.35.2463
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1996
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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  • 2
    Online Resource
    Online Resource
    Reduction of Charge Build-up with High-Power Pulsed Electron Cyclotron Resonance Plasma
    IOP Publishing ; 1997
    In:  Japanese Journal of Applied Physics Vol. 36, No. 4S ( 1997-04-01), p. 2526-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 4S ( 1997-04-01), p. 2526-
    Abstract: Local side etch is one of the most significant problems in high-density plasma and low energy processing. In this paper, we report a detailed analysis of etching characteristics under various modulations and microwave conditions to achieve simultaneously no local side etch, a high etch rate and a high selectivity. In addition, we discuss the mechanism of the reduction of local side etch using a new method to estimate charge build-up.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.36.2526
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1997
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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    Online Resource
  • 3
    Online Resource
    Online Resource
    Pulsed Plasma Processing for Reduction of Profile Distortion Induced by Charge Buildup in Electron Cyclotron Resonance Plasma
    IOP Publishing ; 1996
    In:  Japanese Journal of Applied Physics Vol. 35, No. 4S ( 1996-04-01), p. 2450-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 4S ( 1996-04-01), p. 2450-
    Abstract: The distortion of etched profiles was investigated in pulse-modulated Cl 2 and HCl plasmas using optical emission spectroscopy. Notch depth reduction was observed in both gases with repeated pulsing of the plasma. This reduction strongly depends on the off-time length. According to optical emission analysis, attenuation in the off-period was quite different in Cl 2 and HCl plasmas; it was 2 times faster in HCl plasma. This is explained by higher ambipolar diffusion of protons existing in HCl plasma. The damping process of plasma greatly influences the notch characteristics. In the case of HCl plasma, no aspect-ratio dependence of notching was observed. This indicates that accumulated charges on every pattern area were neutralized by exposure to repeated pulses of plasma.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.35.2450
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1996
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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    Online Resource
  • 4
    Online Resource
    Online Resource
    SiO 2 Etching in C 4 F 8 /O 2 Electron Cyclotron Resonance Plasma
    IOP Publishing ; 1996
    In:  Japanese Journal of Applied Physics Vol. 35, No. 4S ( 1996-04-01), p. 2483-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 4S ( 1996-04-01), p. 2483-
    Abstract: We report the application of C 4 F 8 /O 2 electron cyclotron resonance (ECR) plasma to SiO 2 etching. The effect on SiO 2 etching characteristics of O 2 addition to C 4 F 8 ECR plasma is investigated. In C 4 F 8 ECR plasma (no O 2 addition), strong reactive ion etching (RIE) lag effect of SiO 2 and poly-Si etching is observed. However, with O 2 addition, the RIE lag effect of SiO 2 etching decreases markedly whereas the RIE lag effect of poly-Si etching decreases gradually. Consequently, SiO 2 etching selectivity to poly-Si increases. The results of mass spectrometric measurement using two orifices indicate that surface reaction probability of fluorocarbon molecules is affected by O 2 addition.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.35.2483
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1996
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
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    Online Resource
  • 5
    Online Resource
    Online Resource
    Highly Selective Contact Hole Etching Using Electron Cyclotron Resonance Plasma
    IOP Publishing ; 1995
    In:  Japanese Journal of Applied Physics Vol. 34, No. 4S ( 1995-04-01), p. 2114-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 4S ( 1995-04-01), p. 2114-
    Abstract: The SiO 2 etching process is one of the most significant processes in ultra-large-scale integration (ULSI) fabrication. In order to obtain fine contact holes, it is necessary to achieve both highly selective etching of SiO 2 over other materials, and non-reactive ion etch (non-RIE) lag. We investigated the etching characteristics and the effect of O 2 addition in C 4 F 8 +O 2 plasma using electron cyclotron resonance (ECR) discharge. In C 4 F 8 +O 2 plasma, we can obtain dense fluorocarbon films at low pressure, and films are more durable against ion bombardment than at high pressure. This film enables the suppression of O atoms to the Si surface, and the achievement of high SiO 2 -to-Si selectivity. By additional O 2 , dissociation of high-mass species such as C 2 F 5 proceeds, and at about 20%O 2 , low-mass species, such as C, CF, and CF 2 , increase. Thus we can obtain high SiO 2 -to-Si selectivity and high-aspect-ratio fine contact holes.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.34.2114
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1995
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
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  • 6
    Online Resource
    Online Resource
    Effect of N 2 Addition on Aluminum Alloy Etching by Electron Cyclotron Resonance Reactive Ion Etching and Magnetically Enhanced Reactive Ion Etching
    IOP Publishing ; 1995
    In:  Japanese Journal of Applied Physics Vol. 34, No. 4S ( 1995-04-01), p. 2147-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 4S ( 1995-04-01), p. 2147-
    Abstract: Aluminum alloy etching is an important process in ultra-large-scale integration (ULSI) fabrication. We investigated the effect of N 2 addition to Cl 2 +BCl 3 gas mixture on aluminum-copper alloy etching by electron cyclotron resonance reactive ion etching (ECR-RIE) and magnetically enhanced reactive ion etching (MERIE). In ECR-RIE, N 2 addition was effective in suppressing residues and post-etch corrosion of aluminum alloy interconnects; on the other hand, in MERIE, N 2 addition promoted the formation of residues and post-etch corrosion. This difference is probably caused by BCl X + in plasma, because it was found by mass spectral analysis that N 2 addition increased the amount of BCl X + in plasma of ECR-RIE, but it decreased that in plasma of MERIE.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.34.2147
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1995
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
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    Online Resource
  • 7
    Online Resource
    Online Resource
    Mechanism of Reactive Ion Etching Lag for Aluminum Alloy Etching
    IOP Publishing ; 1995
    In:  Japanese Journal of Applied Physics Vol. 34, No. 4S ( 1995-04-01), p. 2142-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 4S ( 1995-04-01), p. 2142-
    Abstract: It is well known that aluminum anisotropic etching with a photoresist mask is accomplished using a sidewall passivation film which is composed of fragments of photoresist sputtered by ion bombardment. As a result, the selectivity of aluminum to photoresist is reduced under such conditions. Under these conditions, it is thought that the effect of reactive ion etching (RIE) lag becomes a serious problem. We study the dependence of the aluminum etch rate and RIE lag with photoresist and SiO 2 masks on etching parameters. The RIE lag strongly depends on rf bias and the materials of the etching mask. This phenomenon corresponds to the deposition of fragments of mask material sputtered by ion bombardment on the aluminum surface. Moreover, the deposition rate strongly depends on the distance from the pattern edge of the mask. This is that the etch rate in a narrow space pattern is lower than that in an open space pattern.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.34.2142
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1995
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
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  • 8
    Online Resource
    Online Resource
    Precise Evaluation of Pattern Distortion with Variation of the Impurity Concentration and Conductivity of Silicon Films
    IOP Publishing ; 1997
    In:  Japanese Journal of Applied Physics Vol. 36, No. 4S ( 1997-04-01), p. 2491-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 4S ( 1997-04-01), p. 2491-
    Abstract: Many types of silicon film are used as materials for the gate electrodes of ultra large scale integration (ULSI) devices. The influence of varying the type of silicon film on local side etch depth and etch rate is investigated using an ECR plasma etching system. Resistivity of silicon films is varied using various impurity concentrations and annealing temperatures. The etch rate of silicon film is confirmed to increase as resistivity decreases in the case of phosphorus doped film. However, the etch rate is constant or decreases to a small extent in the case of boron doped silicon film. In contrast, it is found that the dependence of local side etch depth on resistivity is different to the dependence of etch rate on resistivity. The local side etch depth decreases in the case of phosphorus doped silicon and is almost constant in the case of boron doped silicon as the resistivity decreases. Thus it is found that local side etch depth does not always increase as resistivity of silicon film decreases. The depth of local side etch is influenced by the vertical etch rate, because the ratio of the just etching time to the overetching time is fixed. It is found that the local side etch rate is almost constant in this experiment. Therefore, it is concluded that the difference in local side etch depth is mostly caused by the difference in vertical etch rate.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.36.2491
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1997
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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  • 9
    Online Resource
    Online Resource
    Influence of Poly-Si Potential on Profile Distortion Caused by Charge Accumulation
    IOP Publishing ; 1996
    In:  Japanese Journal of Applied Physics Vol. 35, No. 4S ( 1996-04-01), p. 2445-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 4S ( 1996-04-01), p. 2445-
    Abstract: The appearance of local side etch in polysilicon etching was investigated using a pattern of lines and spaces (L & S) with spaces of various widths. The local side etch is found to appear at lines connected to the silicon substrate even when there is no exposed area of the silicon substrate. It is also found that the degree of local side etch decreases as the area of exposed silicon substrate increases. From these results, it is considered that the cause of the local side etch is the electron supplied from the silicon substrate to polysilicon through the connection, where the source of electrons is, electron irradiation at the sidewall of the lines which have connection and are facing to the wide spaces. The results also show that the electric potential of the silicon substrate in the case when there is no exposed area is lower than the potential of the exposed area of the silicon substrate.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.35.2445
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1996
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
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    Online Resource
  • 10
    Online Resource
    Online Resource
    Profile Control of poly-Si Etching in Electron Cyclotron Resonance Plasma
    IOP Publishing ; 1995
    In:  Japanese Journal of Applied Physics Vol. 34, No. 4S ( 1995-04-01), p. 2095-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 4S ( 1995-04-01), p. 2095-
    Abstract: Recent studies of plasma etching indicate that high-density charge irradiation easily induces radiation damage and local side etch. The local side etch has a characteristic dependence on the pattern layout and plasma conditions. The local side etch observed in poly-Si patterns with various widths of outside space increases with higher electron temperature perpendicular to the surface normal ( T ev ) and higher ion current density. The rf bias method is effective for reducing local side etch. However, elimination of side etch with rf bias is due to an increased in ion energy. Thus high selectivity and no local side etch cannot be achieved at the same time. The local side etch with rf bias depends on electron temperature. Lower T ev is effective for reducing the side etch even in the biased process.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.34.2095
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1995
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
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