In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 10R ( 1998-10-01), p. 5493-
Abstract:
A multilayer structure consisting of 20 layers of InAs self-assembled quantum dots was grown by molecular beam epitaxy and observed by transmission electron microscopy. The positions of quantum dots in a quantum-dot layer were not correlated with those in the lower quantum-dot layer because of the thick (70 nm) GaAs spacer layer. Threading dislocations were observed, which originated from large strain-relaxed (incoherent) InAs islands in a quantum-dot layer. The dislocations were 30° dislocations in the [112] and [112] directions, and were generated by a misfit between large InAs islands and a GaAs overlayer.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.5493
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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