In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 44, No. 1L ( 2005-01-01), p. L18-
Abstract:
In this study, GaN-based vertical light-emitting diodes (VLEDs) were fabricated by a laser lift-off (LLO) process and the effects of microlens formation by plasma etching on the optical properties of the LLO GaN-based VLED devices were investigated. By forming a 5–10 µm microlens array on the LLO GaN-based VLEDs, the measured light emission intensities at 460 nm and in the direction normal to the surface of the device increased by approximately 40% and 100% compared with those of the LLO GaN-based VLED without the microlens array for 10 µm and 5 µm microlens arrays, respectively.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2005
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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