In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 6R ( 1993-06-01), p. 2803-
Abstract:
Aluminum is a good candidate of low resistivity metal as a gate electrode metal and a gate bus-line metal in amorphous silicon thin-film transistor of liquid crystal display. But it easily brings about hillocks and whiskers during the heat process, and causes defects. Al 2 O 3 formed on aluminum layer is expected to work as a protective layer against hillock formation. The formation of Al 2 O 3 is developed by anodic oxidation method. The electrical characteristics of Al 2 O 3 layers formed at constant DC anodic bias or constant DC current density were investigated. The optimal growth condition of Al 2 O 3 has been developed. In addition, the double-layer of Al 2 O 3 /SiN is also shown to be sufficiently protective against hillock formation.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.2803
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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