In:
Journal of Semiconductors, IOP Publishing, Vol. 44, No. 5 ( 2023-05-01), p. 052101-
Abstract:
Amorphous oxide semiconductors (AOS) have unique advantages in transparent and flexible thin film transistors (TFTs) applications, compared to low-temperature polycrystalline-Si (LTPS). However, intrinsic AOS TFTs are difficult to obtain field-effect mobility ( μ FE ) higher than LTPS (100 cm 2 /(V·s)). Here, we design ZnAlSnO (ZATO) homojunction structure TFTs to obtain μ FE = 113.8 cm 2 /(V·s). The device demonstrates optimized comprehensive electrical properties with an off-current of about 1.5 × 10 –11 A, a threshold voltage of –1.71 V, and a subthreshold swing of 0.372 V/dec. There are two kinds of gradient coupled in the homojunction active layer, which are micro-crystallization and carrier suppressor concentration gradient distribution so that the device can reduce off-current and shift the threshold voltage positively while maintaining high field-effect mobility. Our research in the homojunction active layer points to a promising direction for obtaining excellent-performance AOS TFTs.
Type of Medium:
Online Resource
ISSN:
1674-4926
,
2058-6140
DOI:
10.1088/1674-4926/44/5/052101
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2023
detail.hit.zdb_id:
2484682-X
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