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  • 1
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 68, No. 5 ( 2019), p. 057301-
    Abstract: The spin caloritronics device, because of the characteristics of spintronics and thermoelectronics, plays an important role in human sustainable development. A lot of spin caloritronic devices based carbon materials (such as graphene nanoribbons, carbon nanotubes) have been reported. However, there are few studies of the thermal spin transport properties in a hybrid structure of single-walled carbon nanotubes and zigzag-edge BN nanoribbons, and the thermal spin transport mechanism of this structure is still unclear. In this paper, using the nonequilibrium Green’s function (NEGF) combined with the first principle calculations, the electronic structures and the thermal spin transport properties of the zigzag edge BN nanoribbons functionalized single-walled carbon nanotubes are studied. It is shown that the ZBNRs-N-(6, 6)SWCNT is a half-metal, while the 〈i〉n〈/i〉ZBNRs-N-(6, 6)SWCNT are magnetic metals (〈i〉n〈/i〉 = 2−8), and the 〈i〉n〈/i〉ZBNRs-B-(6, 6)SWCNT are bipolar magnetic semiconductors (〈i〉n〈/i〉 = 1−8). The 4ZBNRs-N-(4, 4)SWCNT and 4ZBNRs-B-(4, 4)SWCNT are half-metals, while the 4ZBNRs-B-(〈i〉m〈/i〉, 〈i〉m〈/i〉)SWCNT (〈i〉m〈/i〉 = 5−9)are magnetic metals, and the 4ZBNRs-N-(〈i〉m〈/i〉, 〈i〉m〈/i〉)SWCNT (〈i〉m〈/i〉 = 5−9) are bipolar magnetic semiconductors. Then, some novel spin caloritronicdevices are designed based on 〈i〉n〈/i〉ZBNRs-N-(6, 6)SWCNT and 〈i〉n〈/i〉ZBNRs-B-(6, 6)SWCNT (〈i〉n〈/i〉 = 1, 8). For the ZBNRs-B-(6, 6)SWCNT, when the temperature of the left electrode is increased above a critical value, the thermal spin-up current then increases remarkably from zero. Meanwhile the thermal spin-down current remains approximately equal to zero in the entire temperature region, thus indicating the formation of a thermal spin filter. For the 8ZBNRs-N-(6, 6)SWCNT and 〈i〉n〈/i〉ZBNRs-B-(6, 6)SWCNT (〈i〉n〈/i〉 = 1, 8), when a temperature gradient is produced between two electrodes, the spin-up and spin-down currents are driven in the opposite directions, which indicates that the spin-dependent Seebeck effect (SDSE) appears. In order to obtain the fundamental mechanism of thermal spin filter effect and SDSE, the Landauer-Büttiker formalism is adopted. It is found that the currents (〈i〉I〈/i〉〈sub〉up〈/sub〉 and 〈i〉I〈/i〉〈sub〉dn〈/sub〉) mainly depend on two factors: 1)the transport coefficient; 2) the difference between the Fermi-Dirac distributions of the left and right electrode. Additionally, the electron current 〈i〉I〈/i〉〈sub〉e〈/sub〉 and the hole current 〈i〉I〈/i〉〈sub〉h〈/sub〉 will be generated when a temperature gradient is produced between the left and right lead. Furthermore, the 〈i〉I〈/i〉〈sub〉up〈/sub〉 and 〈i〉I〈/i〉〈sub〉dn〈/sub〉 have the opposite directions for the spin up transmission peaksbelow the Fermi level while they have the opposite directions for the spin down transmission peaks above the Fermi level in the transmission spectrum, which demonstrates the presence of the SDSE in the 8ZBNRs-B-(6, 6)SWCNT and 〈i〉n〈/i〉ZBNRs-N-(6, 6)SWCNT (〈i〉n〈/i〉 = 1, 8). Finally, the results indicate that 〈i〉n〈/i〉ZBNR-N-(〈i〉m〈/i〉, 〈i〉m〈/i〉)SWCNT and 〈i〉n〈/i〉ZBNR-B-(〈i〉m〈/i〉, 〈i〉m〈/i〉)SWCNT can have potential applications in thermospin electronic devices.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2019
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  • 2
    In: Liver Cancer, S. Karger AG, Vol. 7, No. 3 ( 2018), p. 235-260
    Abstract: 〈 b 〉 〈 i 〉 Background: 〈 /i 〉 〈 /b 〉 Hepatocellular carcinoma (HCC) (about 85–90% of primary liver cancer) is particularly prevalent in China because of the high prevalence of chronic hepatitis B infection. HCC is the fourth most common malignancy and the third leading cause of tumor-related deaths in China. It poses a significant threat to the life and health of Chinese people. 〈 b 〉 〈 i 〉 Summary: 〈 /i 〉 〈 /b 〉 This guideline presents official recommendations of the National Health and Family Planning Commission of the People’s Republic of China on the surveillance, diagnosis, staging, and treatment of HCC occurring in China. The guideline was written by more than 50 experts in the field of HCC in China (including liver surgeons, medical oncologists, hepatologists, interventional radiologists, and diagnostic radiologists) on the basis of recent evidence and expert opinions, balance of benefits and harms, cost-benefit strategies, and other clinical considerations. 〈 b 〉 〈 i 〉 Key Messages: 〈 /i 〉 〈 /b 〉 The guideline presents the Chinese staging system, and recommendations regarding patients with HCC in China to ensure optimum patient outcomes.
    Type of Medium: Online Resource
    ISSN: 2235-1795 , 1664-5553
    Language: English
    Publisher: S. Karger AG
    Publication Date: 2018
    detail.hit.zdb_id: 2666925-0
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  • 3
    In: Translational Lung Cancer Research, AME Publishing Company, Vol. 9, No. 4 ( 2020-8), p. 1516-1527
    Type of Medium: Online Resource
    ISSN: 2218-6751 , 2226-4477
    Language: Unknown
    Publisher: AME Publishing Company
    Publication Date: 2020
    detail.hit.zdb_id: 2754335-3
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  • 4
    In: Chinese Physics B, IOP Publishing, Vol. 28, No. 12 ( 2019-11-01), p. 127302-
    Abstract: We investigated single-electron tunneling through single and coupling dopant-induced quantum dots (QDs) in silicon junctionless nanowire transistor (JNT) by varying temperatures and bias voltages. We observed that two possible charge states of the isolated QD confined in the axis of the initial narrowest channel are successively occupied as the temperature increases above 30 K. The resonance states of the double single-electron peaks emerge below the Hubbard band, at which several subpeaks are clearly observed respectively in the double oscillated current peaks due to the coupling of the QDs in the atomic scale channel. The electric field of bias voltage between the source and the drain could remarkably enhance the tunneling possibility of the single-electron current and the coupling strength of several dopant atoms. This finding demonstrates that silicon JNTs are the promising potential candidates to realize the single dopant atom transistors operating at room temperature.
    Type of Medium: Online Resource
    ISSN: 1674-1056
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 2019
    detail.hit.zdb_id: 2412147-2
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  • 5
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 69, No. 13 ( 2020), p. 137701-
    Abstract: Ferroelectric negative capacitance field effect transistors(Fe-NCFETs) can break through the so-called “Boltzmann Tyranny” of traditional metal oxide semiconductor field effect transistors and reduce the subthreshold swing below 60 mV/dec, which could greatly improve the on/off current ratio and short-channel effect. Consequently, the power dissipation of the device is effectively lowered. The Fe-NCFET provides a choice for the downscaling of the transistor and the continuation of Moore’s Law. In this review, the representative research progress of Fe-NCFETs in recent years is comprehensively reviewed to conduce to further study. In the first chapter, the background and significance of Fe-NCFETs are introduced. In the second chapter, the basic properties of ferroelectric materials are introduced, and then the types of ferroelectric materials are summarized. Among them, the invention of hafnium oxide-based ferroelectric materials solves the problem of compatibility between traditional ferroelectric materials and CMOS processes, making the performance of NCFETs further improved. In the third chapter, the advantages and disadvantages of Fe-NCFETs with MFS, MFIS and MFMIS structures are first summarized, then from the perspective of atomic microscopic forces the “S” relationship curve of ferroelectric materials is derived and combined with Gibbs free energy formula and L-K equation, and the intrinsic negative capacitance region in the free energy curve of the ferroelectric material is obtained. Next, the steady-state negative capacitance and transient negative capacitance in the ferroelectric capacitor are discussed from the aspects of concept and circuit characteristics; after that the working area of negative capacitance Fe-NCFET is discussed. In the fourth chapter, the significant research results of Fe-NCFETs combined with hafnium-based ferroelectrics in recent years are summarized from the perspective of two-dimensional channel materials and three-dimensional channel materials respectively. Among them, the Fe-NCFETs based on three-dimensional channel materials such as silicon, germanium-based materials, III-V compounds, and carbon nanotubes are more compatible with traditional CMOS processes. The interface between the channel and the ferroelectric layer is better, and the electrical performance is more stable. However, thereremain some problems to be solved in three-dimensional channel materials such as the limited on-state current resulting from the low effective carrier mobility of the silicon, the small on/off current ratio due to the leakage caused by the small bandgap of the germanium-based material, the poor interfacial properties between the III-V compound materials and the dielectric layer, and the ambiguous working mechanism of Fe-NCFETs based on carbon nanotube. Compared with Fe-NCFETs based on three-dimensional channel materials, the Fe-NCFETs based on two-dimensional channel materials such as transition metal chalcogenide, graphene, and black phosphorus provide the possibility for the characteristic size of the transistor to be reduced to 3 nm. However, the interface performance between the two-dimensional channel material and the gate dielectric layer is poor, since there are numerous defect states at the interface. Furthermore, the two-dimensional channel materials have poor compatibility with traditional CMOS process. Hence, it is imperative to search for new approaches to finding a balance between device characteristics. Finally, the presently existing problems and future development directions of Fe-NCFETs are summarized and prospected.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2020
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  • 6
    In: Chinese Physics Letters, IOP Publishing, Vol. 29, No. 9 ( 2012-09), p. 098102-
    Type of Medium: Online Resource
    ISSN: 0256-307X , 1741-3540
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 2012
    detail.hit.zdb_id: 2040565-0
    SSG: 6,25
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  • 7
    Online Resource
    Online Resource
    Frontiers Media SA ; 2021
    In:  Frontiers in Cardiovascular Medicine Vol. 8 ( 2021-5-31)
    In: Frontiers in Cardiovascular Medicine, Frontiers Media SA, Vol. 8 ( 2021-5-31)
    Abstract: Background: The impact of concomitant impairments of left and right ventricular (LV and RV) strain on the long-term prognosis of acute ST-elevation myocardial infarction (STEMI) is not clear. Methods: We analyzed CMR images and followed up 420 first STEMI patients from the EARLY Assessment of MYOcardial Tissue Characteristics by CMR in STEMI (EARLY-MYO-CMR) registry (NCT03768453). These patients received timely primary percutaneous coronary intervention (PCI) within 12 h and CMR examination within 1 week (median, 5 days; range, 2–7 days) after infarction. Global longitudinal strain (GLS), global radial strain (GRS), and global circumferential strain (GCS) of both ventricles were measured based on CMR cine images. Conventional CMR indexes were also assessed. Primary clinical outcome was composite major adverse cardiac and cerebrovascular events (MACCEs) including cardiovascular death, re-infarction, re-hospitalization for heart failure and stroke. In addition, CMR data from 40 people without apparent heart disease were used as control group. Results: Compared to controls, both LV and RV strains were remarkably reduced in STEMI patients. During follow-up (median: 52 months, interquartile range: 29–68 months), 80 patients experienced major adverse cardiac and cerebrovascular events (MACCEs) including cardiovascular death, re-infarction, heart failure, and stroke. LV-GCS & gt; −11.20% was an independent predictor of MACCEs ( P & lt; 0.001). RV-GRS was the only RV strain index that could effectively predict the risk of MACCEs (AUC = 0.604, 95% CI [0.533, 0.674], P = 0.004). Patient with RV-GRS ≤ 38.79% experienced more MACCEs than those with preserved RV-GRS (log rank P & lt; 0.001). Moreover, patients with the concomitant decrease of LV-GCS and RV-GRS were more likely to experience MACCEs than patients with decreased LV-GCS alone (log rank P = 0.010). RV-GRS was incremental to LV-GCS for the predictive power of MACCEs (continuous NRI: 0.327; 95% CI: 0.095–0.558; P = 0.006). Finally, tobacco use ( P = 0.003), right coronary artery involvement ( P = 0.002), and LV-GCS & gt; −11.20% ( P = 0.012) was correlated with lower RV-GRS. Conclusions: The concomitant decrease of LV and RV strain is associated with a worse long-term prognosis than impaired LV strain alone. Combination assessment of both LV and RV strain indexes could improve risk stratification of patients with STEMI. Trial Registration: ClinicalTrials.gov , NCT03768453. Registered 7 December 2018 - Retrospectively registered, https://clinicaltrials.gov/ct2/show/NCT03768453 .
    Type of Medium: Online Resource
    ISSN: 2297-055X
    Language: Unknown
    Publisher: Frontiers Media SA
    Publication Date: 2021
    detail.hit.zdb_id: 2781496-8
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  • 8
    In: The International Journal of Cardiovascular Imaging, Springer Science and Business Media LLC, Vol. 36, No. 6 ( 2020-06), p. 1167-1175
    Type of Medium: Online Resource
    ISSN: 1569-5794 , 1573-0743
    Language: English
    Publisher: Springer Science and Business Media LLC
    Publication Date: 2020
    detail.hit.zdb_id: 3163889-2
    detail.hit.zdb_id: 2008950-8
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  • 9
    In: Chinese Physics B, IOP Publishing, Vol. 28, No. 6 ( 2019-06-01), p. 066804-
    Abstract: We have investigated the temperature-dependent effective mobility characteristics in impurity band and conduction subbands of n-doped silicon junctionless nanowire transistors. It is found that the electron effective mobility of the first subband in 2-fold valleys is higher than that of the second subband in 4-fold valleys. There exists a maximum value for the effective subband mobilities at low temperatures, which is attributed to the increase of thermally activated electrons from the ionized donors in the impurity band. The experimental results indicate that the effective subband mobility is temperature-dependent on the electron interactions by thermal activation, impurity scattering, and intersubband scattering.
    Type of Medium: Online Resource
    ISSN: 1674-1056
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 2019
    detail.hit.zdb_id: 2412147-2
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  • 10
    Online Resource
    Online Resource
    IOP Publishing ; 2022
    In:  Chinese Physics B Vol. 31, No. 1 ( 2022-01-01), p. 017701-
    In: Chinese Physics B, IOP Publishing, Vol. 31, No. 1 ( 2022-01-01), p. 017701-
    Abstract: We investigate the influence of source and drain bias voltages ( V DS ) on the quantum sub-band transport spectrum in the 10-nm width N-typed junctionless nanowire transistor at the low temperature of 6 K. We demonstrate that the transverse electric field introduced from V DS has a minor influence on the threshold voltage of the device. The transverse electric field plays the role of amplifying the gate restriction effect of the channel. The one-dimensional (1D)-band dominated transport is demonstrated to be modulated by V DS in the saturation region and the linear region, with the sub-band energy levels in the channel ( E channel ) intersecting with Fermi levels of the source ( E fS ) and the drain ( E fD ) in turn as V g increases. The turning points from the linear region to the saturation region shift to higher gate voltages with V DS increase because the higher Fermi energy levels of the channel required to meet the situation of E fD = E channel . We also find that the bias electric field has the effect to accelerate the thermally activated electrons in the channel, equivalent to the effect of thermal temperature on the increase of electron energy. Our work provides a detailed description of the bias-modulated quantum electronic properties, which will give a more comprehensive understanding of transport behavior in nanoscale devices.
    Type of Medium: Online Resource
    ISSN: 1674-1056
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 2022
    detail.hit.zdb_id: 2412147-2
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