In:
Semiconductor Science and Technology, IOP Publishing
Abstract:
The Super-junction Insulated Gate Bipolar Transistor (SJ-IGBT), due to its unipolar/bipolar mixed conduction mechanism, the approaches to improve its $\textit{V}_\textbf{on}$-$\textit{E}_\textbf{off}$ are not exactly the same as non-SJ IGBTs. For the pursue of extremely low $\textit{E}_\textbf{off}$, a planar auxiliary anode gate SJ-IGBT (AAG-SJ-IGBT) is proposed based on 650V SJ-IGBT to realize a unipolar turn-off as SJ-MOSFETs accompanied with fast switching and extremely low $\textit{E}_\textbf{off}$. The planar auxiliary anode gate provides similar effects but better feasibility than conventional trench ones. Sentaurus TCAD simulation results of the proposed AAG-SJ-IGBT indicates the -69\% smaller $\textit{t}_\textbf{doff}$ and -54\% lower $\textit{E}_\textbf{off}$ than the FP-SJ-IGBT, and its $\textit{V}_\textbf{on}$-$\textit{E}_\textbf{off}$ is significantly optimized from cathode improved SJ-IGBTs. The analysis of carrier and current density reveals the static and dynamic characteristics of the AAG-SJ-IGBT and the principle for excellent $\textit{V}_\textbf{on}$-$\textit{E}_\textbf{off}$ Trade-off.
Type of Medium:
Online Resource
ISSN:
0268-1242
,
1361-6641
DOI:
10.1088/1361-6641/acb37d
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2023
detail.hit.zdb_id:
54647-1
detail.hit.zdb_id:
1361285-2
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