In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 53, No. 5S1 ( 2014-05-01), p. 05FF02-
Abstract:
Cathodoluminescence (CL) spectra were measured from polycrystalline Ga–In–O (GIO) films prepared by the molecular precursor method (MPM). Bandgap-energy ( E g ) and conductivity were successfully controlled by changing in the mixing ratio of the Ga and In precursor solutions. Although none of the films exhibited a near-band-edge emission, their CL emissions exhibited energy shifts by reflecting changes in E g and ligand field in the GIO alloys. The results indicate a practical use of MPM-grown GIO films for deep ultraviolet optoelectronic devices.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.53.05FF02
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2014
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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