In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 44, No. 9R ( 2005-09-01), p. 6510-
Abstract:
Cr-doped GaN films were epitaxially grown on Si(111) substrates by molecular-beam epitaxy using NH 3 as a nitrogen source, and the magnetic and magneto-optical properties of the films were measured. Magnetic measurements using a superconducting quantum interference device (SQUID) magnetometer revealed that the Cr-doped GaN films showed ferromagnetic behavior at 5 K. However, magnetic circular dichroism (MCD) measurements revealed that the observed ferromagnetism could not be attributed to the Cr-doped GaN itself, but to unidentified ferromagnetic precipitates in the grown layers.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.44.6510
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2005
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Permalink