In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 2S ( 1996-02-01), p. 898-
Abstract:
A MONOS (metal/oxide/nitride/oxide/semiconductor) type nonvolatile memory transistor with a gate length of 0.23 µm has been developed. This memory transistor offers high endurance, low programming voltage and a narrow distribution of programmed threshold voltages. By introducing a rapid thermal nitridation (RTN) step into the fabrication prosecc of the ONO (oxide/nitride/oxide) layer, an enhancement in erase speed of one order of magnitude is achieved. The RTN also improves the oxidation resistance of the nitride layer, so that scaling down the thickness of the ONO film in order to reduce the programming voltage is feasible.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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