In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 43, No. 4R ( 2004-04-01), p. 1264-
Abstract:
Bulk-like GaN with high structural and optical quality has been attained by hydride vapor-phase epitaxy (HVPE). The as-grown 330 µm-thick GaN layer was separated from the sapphire substrate by a laser-induced lift-off process. The full width at half maximum values of the X-ray diffraction (XRD) ω-scans of the free-standing material are 96 and 129 arcsec for the (1 0 -1 4) and (0 0 0 2) reflection, respectively, which rank among the smallest values published so far for free-standing HVPE-GaN. The dislocation density determined by plan-view TEM images is 1–2×10 7 cm -2 . Positron annihilation spectroscopy studies show that the concentration of Ga vacancy related defects is about 1.5×10 16 cm -3 . The high-resolution XRD, photoluminescence, µ-Raman, and infrared spectroscopic ellipsometry measurements consistently prove that the free-standing material is of high crystalline quality and virtually strain-free. Therefore it is suitable to serve as a substrate for stress-free growth of high-quality III–nitrides based device heterostructures.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.43.1264
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2004
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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