In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 44, No. 6R ( 2005-06-01), p. 3740-
Abstract:
We report the remarkable effects of physical and chemical treatments of substrate surface on the physical vapor deposition of rubrene thin films. Highly c -axis oriented rubrene thin films were fabricated by combinatorial molecular beam epitaxy on atomically flat α-Al 2 O 3 (0001) substrates, the surface of which was partially modified with pentacene buffer film. Rubrene thin films grown at room temperature on a sapphire substrate without pentacene buffer layer did not exhibit any X-ray diffraction pattern, whereas films deposited on a pentacene buffer layer exhibited peaks of c -axis orientation. Atomic force microscope images of the crystalline films show the steps of 1.3 nm height which correspond to the half c -axis length of the rubrene crystal. Preliminary, p -type operation was observed in bottom-gate field effect transistors using this rubrene film deposited on a pentacene buffer.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.44.3740
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2005
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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