In:
Scientific Reports, Springer Science and Business Media LLC, Vol. 8, No. 1 ( 2018-07-19)
Abstract:
Multiple functionality of tungsten polyoxometalate (POM) has been achieved applying it as interfacial layer for solution processed high performance In 2 O 3 thin film transistors, which results in overall improvement of device performance. This approach not only reduces off-current of the device by more than two orders of magnitude, but also leads to a threshold voltage reduction, as well as significantly enhances the mobility through facilitated charge injection from the electrode to the active layer. Such a mechanism has been elucidated through morphological and spectroscopic studies.
Type of Medium:
Online Resource
ISSN:
2045-2322
DOI:
10.1038/s41598-018-29220-0
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2018
detail.hit.zdb_id:
2615211-3
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