In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 6S ( 2001-06-01), p. 4388-
Abstract:
On the atomically flat C-face 6H-SiC surface prepared by ultra high vacuum Si-etching, two-dimensional growth of GaN (0001̄) thin films is observed with an AlN buffer layer using N-plasma assisted molecular beam epitaxy. Scanning tunneling microscopy measurements reveal a series of Ga-stabilized reconstructions, which are consistent with the surface phases reported for the GaN (0001̄) film, but are different from that of the GaN(0001) surface. The result agrees with the polarity assignment of the heteroepitaxial wurtzite GaN films on polar 6H-SiC substrates, that is, a GaN film grown on SiC(0001̄) is 〈 0001̄ 〉 oriented (N-face) while that on SiC(0001) is 〈 0001 〉 oriented (Ga-face).
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.40.4388
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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