In:
Japanese Journal of Applied Physics, IOP Publishing
Abstract:
In our past research, Group-III nitride nanopillar crystals were grown vertically on the multi-crystalline silicon substrate and applied to surface-emitting LEDs. To discuss the further possibilities of this kind of LEDs, such as application in deep visible, Mg-doped GaN and InGaN as important parts of the LEDs were grown under various conditions. Different testing experiments were carried out on these GaN-related samples to clarify their surface morphologies and luminescence characteristics. It was confirmed that Mg was successfully doped into GaN grown on the multi-crystalline silicon substrate. InGaN with a wide range of In-contents was obtained by using the same substrate. It is believed that these materials can be applied to various optoelectronic devices, especially large-area light-emitting devices with emissions of more colors, by analyzing the various properties.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.35848/1347-4065/acf2a4
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2023
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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