In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 527-529 ( 2006-10), p. 451-454
Abstract:
4H-SiC single crystal with a diameter of 1.5’’ has been grown by the seed sublimation
method. Regions of mixed polytypes are assessed by high resolution X-ray diffractometry with the asymmetrical diffraction geometry. Multiple reflections are observed from the rocking curve
measurements of a longitudinal cut 4H-SiC slice. Those reflections are indexed to be 2131 and 2131 of 4H-SiC, 2130 , 2131 , 2131 , 2132 and 2132 of 6H-SiC, 2131 , 2132 , 2134 , 2135 and
2137 of 15R-SiC respectively based on the lattice constants of different polytypes in SiC crystal. It is believed that the polytypes can be identified by high resolution X-ray diffractometry.
Type of Medium:
Online Resource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.527-529
DOI:
10.4028/www.scientific.net/MSF.527-529.451
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2006
detail.hit.zdb_id:
2047372-2
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