In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 63, No. 11 ( 2014), p. 116101-
Abstract:
In order to study the total dose effect and hardness assurance technology for the bipolar devices, we have designed and fabricated different gate-controlled lateral PNP bipolar transistors by various technologies, and preformed 60Co-γ low-dose rate irradiation. The test results show that: 1) Irradiation characteristics of the gate-controlled bipolar transistor are strongly dependent on the fabrication technology, and the passivation layer has a great influence on the irradiation response of the device. The device with a passivation layer will have more interface traps in ionizing radiation environments, and its resistance to ionizing irradiation is greatly weakened. 2) A domestic gated-controlled lateral PNP transistor exhibited a peak current broadening effect at low-dose rate irradiation. In this paper, we analyze the mechanism of the broadening effect, and put forward a new separation method for reducing the base current broadening effect, which not only provides the basis for the design of hardened devices, but also a powerful tool for the study of the enhanced low-dose rate sensitivity of the bipolar device.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
DOI:
10.7498/aps.63.116101
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
2014
Permalink