In:
Journal of Applied Physics, AIP Publishing, Vol. 106, No. 7 ( 2009-10-01)
Abstract:
The electrical properties, admittance spectra, microcathodoluminescence, and deep trap spectra of p-AlGaN films with an Al mole fraction up to 45% grown by both metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were compared. The ionization energy of Mg increases from 0.15 to 0.17 eV in p-GaN to 0.3 eV in 45% Al p-AlGaN. In p-GaN films grown by MBE and MOCVD and in MOCVD grown p-AlGaN, we observed additional acceptors with a concentration an order lower than that of Mg acceptors, with a higher hole capture cross section and an ionization energy close to that of Mg. For some of the MBE grown p-AlGaN, we also detected the presence of additional acceptor centers, but in that case the centers were located near the p-AlGaN layer interface with the semi-insulating AlGaN buffer and showed activation energies considerably lower than those of Mg.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2009
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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