In:
physica status solidi (a), Wiley, Vol. 209, No. 3 ( 2012-03), p. 487-490
Abstract:
This work presents a theoretical comparison of efficiency in III‐nitride light emitting diodes (LEDs). We simulate non‐, semi‐, and polar devices, and analyze their I – V characteristics and internal quantum efficiencies (IQEs). In addition we present simulations of a new structural design for nitride devices, with decreased polarization charges, using quaternary AlInGaN material.
Type of Medium:
Online Resource
ISSN:
1862-6300
,
1862-6319
DOI:
10.1002/pssa.201100377
Language:
English
Publisher:
Wiley
Publication Date:
2012
detail.hit.zdb_id:
1481091-8
detail.hit.zdb_id:
208850-2
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