In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 44, No. 1L ( 2005-01-01), p. L150-
Abstract:
Epitaxial Al-polarity AlN films were deposited on (0001) sapphire using a metalorganic chemical vapor deposition process involving a modulated ammonia/trimethyl aluminum flow, a pressure reduction from 150 Torr to 40 Torr after the first stage of growth, and growing the first ∼0.1 µm of AlN at a moderate V/III ratio, followed by a switch to low V/III for the remainder of the growth. Smooth, flat epitaxial films with a full width half maximum of the X-ray rocking curves as low as 177 arcseconds/650 arcseconds for the (0002)/(1012) reflections were obtained.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.44.L150
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2005
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Permalink