In:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 29, No. 3 ( 2011-05-01)
Abstract:
The demonstration of a salicidelike self-aligned contact technology for III-V metal-oxide-semiconductor field-effect transistors (MOSFETs) is reported. A thin and continuous crystalline germanium-silicon (GeSi) layer was selectively formed on n+ doped gallium arsenide (GaAs) regions by epitaxy. A new self-aligned nickel germanosilicide (NiGeSi) Ohmic contact with good morphology was achieved using a two-step annealing process with precise conversion of the GeSi layer into NiGeSi. NiGeSi contact with the contact resistivity (ρc) of 1.57 Ω mm and sheet resistance (Rsh) of 2.8 Ω/◻ was achieved. The NiGeSi-based self-aligned contact technology is promising for future integration in high performance III-V MOSFETs.
Type of Medium:
Online Resource
ISSN:
2166-2746
,
2166-2754
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2011
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
1475429-0
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