In:
Journal of Applied Physics, AIP Publishing, Vol. 122, No. 15 ( 2017-10-21)
Abstract:
Resistance random access memory (RRAM) is considered a promising candidate for the next generation of non-volatile memory. In this work, we fabricate metal (Ag, Ti, or Pt)/ZnO/Pt RRAM cells and then systematically investigate the effects of different top electrodes and their performance. With the formation and rupture of Ag-bridge and the shapeless oxygen vacancy filaments under a series of positive and negative bias, the set and reset processes have been successfully conducted in the Ag/ZnO/Pt device with very low work voltage, high on-off ratio, and good endurance. When applying the voltage bias to the Ti/ZnO/Pt device, the interfacial oxygen ions' migration causes the redox reaction of the conducting filament's oxygen vacancies, leading to the formation and rupture of the conducting filaments but in a relatively poor endurance. At the same time, for the Pt/ZnO/Pt device, once the filaments in the functional layer consisting of oxygen vacancies are formed, it is difficult to disrupt, resulting in the permanent low resistance state after a forming-like process. The results demonstrated that the devices with a metallic conductive bridge mechanism show much better switching behaviors than those with an oxygen ion/vacancy filament mechanism.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2017
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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