In:
Advanced Functional Materials, Wiley, Vol. 20, No. 15 ( 2010-08-09), p. 2511-2518
Abstract:
In‐plane growth of Mg 2 SiO 4 nanowires on Si substrates is achieved by using a vapor transport method with Au nanoparticles as catalyst. The self‐assembly of the as‐grown nanowires shows dependence on the substrate orientation, i.e., they are along one, two, and three particular directions on Si (110), (100), and (111) substrates, respectively. Detailed electron microscopy studies suggest that the Si substrates participate in the formation of Mg 2 SiO 4 , and the epitaxial growth of the nanowires is confined along the Si 〈 110 〉 directions. This synthesis route is quite reliable, and the dimensions of the Mg 2 SiO 4 nanowires can be well controlled by the experiment parameters. Furthermore, using these nanowires, a lithography‐free method is demonstrated to fabricate nanowalls on Si substrates by controlled chemical etching. The Au nanoparticle catalyzed in‐plane epitaxial growth of the Mg 2 SiO 4 nanowires hinges on the intimate interactions between substrates, nanoparticles, and nanowires, and our study may help to advance the developments of novel nanomaterials and functional nanodevices.
Type of Medium:
Online Resource
ISSN:
1616-301X
,
1616-3028
DOI:
10.1002/adfm.201000442
Language:
English
Publisher:
Wiley
Publication Date:
2010
detail.hit.zdb_id:
2029061-5
detail.hit.zdb_id:
2039420-2
SSG:
11
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