In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 475-479 ( 2005-1), p. 3791-3794
Abstract:
One of the most challenging problems to develop polycrystalline silicon thin-film solar
cells is the growth of crystalline silicon on foreign, low-cost and low-temperature substrates. In this paper, a laser doping technique was developed for the plasma-deposited amorphous silicon film. A process combination of recrystallization and dopant diffusion (phosphorous or boron) was achieved simultaneously by the laser annealing process. The doping precursor was synthesized by a sol-gel method and was spin-coated on the sample. After laser irradiation, the grain size of the doped polycrystalline silicon was examined to be about 0.5~1.0 µm. The concentrations of 2×1019 and 5× 1018 cm-3 with Hall mobilities of 92.6 and 37.5 cm²/V-s were achieved for the laser-diffused phosphorous- and boron-type polysilicon films, respectively.
Type of Medium:
Online Resource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.475-479
DOI:
10.4028/www.scientific.net/MSF.475-479.3791
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2005
detail.hit.zdb_id:
2047372-2
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