In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 44, No. 4S ( 2005-04-01), p. 2171-
Abstract:
In this study, film-stress-induced device performance variation is characterized in terms of digital and analog performances. Interlayer dielectric (ILD) layers such as PECVD Si 3 N 4 and LPCVD SiON with different stress-affected saturation currents and off-state leakage currents are investigated extensively. To further analyze stress effects, the film stress of PECVD Si 3 N 4 is varied from compressive stress to tensile stress. It is shown that tensile stress improved NMOS performance through the decrease of interface state density ( D it ) and the increase of carrier mobility. In the case of PMOS with highly tensile stress, the mobility is decreased due to the increase of D it . The oxide fixed charge Q f of PMOS is also reduced evidently by the tensile stress film.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.44.2171
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2005
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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