In:
International Journal of Photoenergy, Hindawi Limited, Vol. 2014 ( 2014), p. 1-6
Abstract:
One process of layer-by-layer sol-gel deposition without sulfurization was developed. The CZTS films with 1.2 μ m and the sulfur ratio of ~48% were prepared and their characteristics were measured. The as-deposited and annealed films are of Kesterite structure. The as-deposited films do not present obvious electric conduction type. However, the annealed 9-LAY-ANN film is p-type conduction and has sheet resistance of 4.08 kΩ/□ and resistivity of 4.896 × 10 −1 Ω·cm. The optic energy gap is 1.50 eV for as-deposited films and is 1.46 eV after being annealed. The region deposited by using Lo-Con solution is more compact than that by the Hi-Con solution from SEM morphology images.
Type of Medium:
Online Resource
ISSN:
1110-662X
,
1687-529X
Language:
English
Publisher:
Hindawi Limited
Publication Date:
2014
detail.hit.zdb_id:
2028941-8
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