In:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 29, No. 4 ( 2011-07-01)
Abstract:
Metal electrodes were found to influence the wet selective etching of GaAs in a citric acid/hydrogen peroxide solution. The authors found that metal films such as a Cr/Au or Ti/Au alloy deposited on a semiconductor surface can mostly prevent the etching of GaAs. The GaAs sacrificial material that was exposed to the selective etchant near the metal electrode was not removed at all. Contrast experiments show that it can be removed selectively if no metal is present on the surface or if the GaAs is located far enough from the metal. Electrochemical analyses were undertaken to determine the passivation mechanism.
Type of Medium:
Online Resource
ISSN:
2166-2746
,
2166-2754
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2011
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
1475429-0
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