In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 52, No. 11R ( 2013-11-01), p. 110201-
Abstract:
InN hexagonal monocrystalline films were grown on yttria-stabilized zirconia (YSZ) (111) and Al 2 O 3 (0001) by the organometallic vapor phase epitaxy method with nitrogen activation in the electron cyclotron resonance discharge, supported by gyrotron radiation. The film growth rate reached 10 µm/h. In this paper, we present data on the morphology, structure, and photoluminescence properties of the grown films.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.52.110201
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2013
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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