In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 8R ( 1999-08-01), p. 4893-
Abstract:
The contact potential of GaAs pn junctions was measured by Kelvin probe force microscopy (KFM). The contact potential profile of the pn junctions was not clear in the case of no illumination. When the sample was illuminated with a microscope light, the potential profile reflecting pn junctions became clear. The observed surface potential was explained by taking the surface band bending due to surface states into account.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.38.4893
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1999
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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