In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 30, No. 10A ( 1991-10-01), p. L1756-
Abstract:
Adsorption and desorption of galliumchloride (GaCl) on GaAs surfaces are investigated to understand the self-limiting process in the chloride atomic layer epitaxy (ALE). Adsorption energy of GaCl on GaAs (100) surfaces is determined by temperature programmed desorption (TPD). As stabilized 2×4 surfaces and Ga stabilized 4×6 reconstructed surfaces are exposed to a GaCl molecular beam which is produced by a newly designed GaCl cell. GaCl desorption is observed on both 2×4 and 4×6 surfaces, while the desorption of GaCl x ( x =2, 3), AsCl x ( x =1∼3) and Cl 2 are not detected. The adsorption energy of GaCl, E ad , is calculated to be 38 kcal/mol for the 2×4 surface and 32 kcal/mol for the 4×6 surface. The adsorbed species in chloride ALE process is also discussed with reference to the surface residence time of GaCl.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.30.L1756
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1991
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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