In:
Journal of Applied Crystallography, International Union of Crystallography (IUCr), Vol. 46, No. 4 ( 2013-08-01), p. 898-902
Abstract:
The technique of reciprocal space mapping using X-rays is a recognized tool for the nondestructive characterization of epitaxial films. X-ray scattering from epitaxial Si 0.4 Ge 0.6 films on Si(100) substrates using a laboratory X-ray source was investigated. It is shown that a laboratory source with a rotating anode makes it possible to investigate the material parameters of the super-thin 2–6 nm layers. For another set of partially relaxed layers, 50–200 nm thick, it is shown that from a high-resolution reciprocal space map, conditioned from diffuse scattering on dislocations, it is possible to determine quantitatively from the shape of a diffraction peak (possessing no thickness fringes) additional parameters such as misfit dislocation density and layer thickness as well as concentration and relaxation.
Type of Medium:
Online Resource
ISSN:
0021-8898
DOI:
10.1107/S0021889813010492
Language:
Unknown
Publisher:
International Union of Crystallography (IUCr)
Publication Date:
2013
detail.hit.zdb_id:
2020879-0
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