In:
physica status solidi (b), Wiley, Vol. 243, No. 7 ( 2006-06), p. 1524-1528
Abstract:
In this study, the anisotropic strain in a ‐plane AlGaN on GaN was investigated by X‐ray diffraction (XRD) analysis using AlGaN/GaN heterostructure grown on r ‐plane sapphire. An a ‐plane GaN layer is compressively strained, particularly in the m ‐axis direction. According to XRD reciprocal lattice space mapping, the AlGaN layer was strained under tensile stress and grown almost coherently to the underlying GaN layer. The tensile stress in the AlGaN layer in the c ‐axis direction is approximately 1.7 times larger than that in the m ‐axis direction. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Type of Medium:
Online Resource
ISSN:
0370-1972
,
1521-3951
DOI:
10.1002/pssb.200565344
Language:
English
Publisher:
Wiley
Publication Date:
2006
detail.hit.zdb_id:
208851-4
detail.hit.zdb_id:
1481096-7
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