In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 784 ( 2003)
Abstract:
We have examined the growth of a number of important ferroelectric oxides by MOCVD using a rotating disk reactor. Highly uniform and reproducible films over 6” wafers have been routinely achieved. Materials include Lead Zirconate Titanate (PZT, PbZr x Ti 1-x O 3 ), Lead Lanthanum Zirconate Titanate (PLZT), Strontium Bismuth Tantalate (SBT), CeMnO 3 (CMO), and others. Emphasis has been on achieving highly crystalline and oriented films at the lowest deposition temperatures possible, for compatibility with other integrated device materials and processing; and the achievement of optimum ferroelectric and pyroelectric performance. The effects of varying growth parameters, barrier and/or template layers, and post-growth annealing have been studied. The growth process, physical characterization, and ferroelectric film properties will be discussed.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-784-C11.47
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2003
Permalink