In:
Applied Physics Letters, AIP Publishing, Vol. 91, No. 15 ( 2007-10-08)
Abstract:
Ultrathin TaSiC amorphous films prepared by magnetron cosputtering using TaSi2 and C targets on Si(100), in a sandwiched scheme Si(100)∕TaSiC(5nm)∕Cu, were evaluated for barrier performance in copper metallization. Optimizing carbon content maximizes thermal stability of the films as depicted by sheet-resistance, x-ray diffraction, and transmission electron microscopy examination. The stability temperatures of 700°C (24at.% C) and 750°C (34at.% C) have been systematically verified and discussed. Since Ta, Si, and C are compatible with integrated circuit (IC) processing, the TaSiC films are readily applicable for sub-65-nm IC production.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2007
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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