In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 5R ( 1995-05-01), p. 2229-
Abstract:
A new organogermanium precursor, tetraethylgermane (TEGe, Ge(C 2 H 5 ) 4 ) was used with disilane in ArF excimer laser chemical vapor deposition of hydrogenated amorphous silicon-germanium films (a-Si 1- x Ge x :H,C). The germanium composition, x , could easily be controlled since it almost coincided with the gas-phase composition. The optical band gap ( E opt ) of the film was reduced from 1.8 eV ( x =0) to 1.4 eV ( x =0.8). This relatively wide E opt compared with conventional hydrogenated or fluorinated silicon-germanium, was ascribed to the carbon corporation and dominant SiH 2 and GeH 2 bonds in the film.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.34.2229
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1995
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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