In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 18, No. 6 ( 2000-11-01), p. 2624-2626
Abstract:
The current leakages of InAs photodiodes have been systematically studied by adding undoped layers having thicknesses of 0, 0.30, and 0.72 μm between the p–n junction. At reverse bias V=−0.5 V, the dark currents of the InAs p–i–n diodes with undoped layer thicknesses of 0, 0.30, and 0.72 μm are about 5×10−6, 7×10−8, and 1×10−10 A, respectively, at 77 K. The leakage current of the InAs p–n diode was successfully reduced by adding 0.72-μm-thick undoped layer between the p–n junction.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2000
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
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