In:
Advanced Materials Research, Trans Tech Publications, Ltd., Vol. 11-12 ( 2006-2), p. 159-162
Abstract:
Transparent indium-doped ZnO (IZO) films with low In content ( 〈 6at%) were fabricated
through radio-frequency (rf) helicon magnetron sputtering. Formation of In-Zn-O solid solution was confirmed by X-ray diffraction (XRD) patterns. Incorporation of indium into ZnO films enhances the
optical transmission in the visible wavelength. The optical band-gaps slightly increase from 3.25eV (ZnO) to 3.28eV (In0.04Zn0.96O) and to 3.30eV (In0.06Zn0.94O) due to Burstain-Moss effect. The
Urbach tail parameter E0, which is believed to be a function of structural disorder, increases from 79meV (ZnO), to 146meV (In0.04Zn0.96O), and to 173meV (In0.06Zn0.94O), which is consistent with
increase of Full-Width Half-Maximum (FWHM) in corresponding XRD patterns. Decreasing in crystal quality with increasing indium concentration is also confirmed by photoluminescence spectra.
Type of Medium:
Online Resource
ISSN:
1662-8985
DOI:
10.4028/www.scientific.net/AMR.11-12
DOI:
10.4028/www.scientific.net/AMR.11-12.159
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2006
detail.hit.zdb_id:
2265002-7
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