In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 11R ( 1999-11-01), p. 6327-
Abstract:
The gain spectral characteristics of 1.5-µm-wavelength GaInAsP/InP compressively strained quantum-wire lasers with wire widths of 20 nm and 25 nm, fabricated by electron-beam lithography and two-step organometallic vapor phase epitaxial growth, were measured at a temperature of 100 K and were compared with those of quantum-film lasers fabricated on the same wafer. It was found, for the first time, that the material gain spectrum of quantum-wire lasers is narrower than that of the quantum-film laser. Moreover, the origin of this narrow gain spectral property of the quantum-wire lasers was theoretically investigated and explained in terms of the twofold longer intraband relaxation time in the quantum-wire structure.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.38.6327
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1999
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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