In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 6R ( 1995-06-01), p. 3307-
Abstract:
We investigated photoluminescence intensity dependence on the width of GaInAs/GaInAsP/InP wire structures prepared by substrate-potential-controlled reactive ion beam etching. As a result, the sidewall recombination velocity was estimated to be 2.5 ×10 3 cm/s under a low excitation power of approximately 1 W/cm 2 (Ar + -ion laser, λ=514.5 nm) at 77 K, and was almost the same as that fabricated by wet chemical etching.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.34.3307
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1995
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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