In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 11R ( 2001-11-01), p. 6260-
Abstract:
We have developed two methods for the p-type activation of Mg-doped GaN; a low-temperature long-time annealing method and a RF input activation method. In the low-temperature long-time annealing method, hole concentration increased in proportion to the square root of annealing time. It took ∼ 80 h to obtain hole concentrations of ∼ 10 18 cm -3 at 385°C annealed in air. In the RF input activation method, hole concentration increased with the product of RF input time and amplitude of the RF electric field. It took ∼ 70 s to get hole concentrations of ∼ 10 18 cm -3 at a RF electric field of ∼ 21 kV/cm. No specific difference was observed for the optical and electrical properties as compared to those of thermally activated samples annealed between 475°C and 800°C in a N 2 atmosphere. The photoluminescence (PL) intensity was found to decrease with increasing hole concentration in all activation methods. Nonradiative recombination process is thought to become dominant at hole concentrations over ∼ 2×10 16 cm -3 independent of the activation method.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.40.6260
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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