In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 52, No. 1S ( 2013-01-01), p. 01AC04-
Abstract:
The effects of light exposure during plasma processing on the electrical properties of GeO 2 /Ge structures were clarified by comparing their capacitance–voltage and conductance–voltage characteristics with those of Al 2 O 3 /Ge MOS structures. In addition, the effects of moisture in air and H 2 O exposures during the atomic layer deposition (ALD) process on the GeO 2 /Ge interface properties were investigated. It was found that light exposure causes far less degradation of the GeO 2 /Ge interface than of the Al 2 O 3 /Ge interface. However, for the GeO 2 /Ge interface, degradation resulted from air and H 2 O exposures during the ALD process. Exposure to air was also found to enhance the degradation caused by light exposure. These results strongly suggest that the GeO 2 /Ge interface is robust against light exposure, but it is important to suppress moisture and H 2 O exposure in order to maintain its high quality during plasma processing.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.52.01AC04
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2013
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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