In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 7R ( 1997-07-01), p. 4355-
Abstract:
n-type layers in silicon with high carrier concentrations have been formed by high-dose (1×10 15 –1×10 16 cm -2 ) As-ion implantation and subsequently 950°C-annealing. The n-type layers containing many As clusters were exposed to radio-frequency hydrogen plasma for 30 min. While the hydrogenated samples had the same As-atom concentration profile as the as-annealed samples, the carrier concentration profiles approached the As atom concentration profile with increasing substrate temperature. The activation energy obtained from the Arrhenius plot of the carrier concentration agreed well with that of the diffusivity of H atoms in silicon. Thus, the increase in the carrier concentration is a result of H atoms reacting with As clusters.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.4355
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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