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  • 1
    Online Resource
    Online Resource
    Selective Growth Conditions of ZnSe/ZnS Heterostructures on (001) GaAs with Metalorganic Molecular Beam Epitaxy
    IOP Publishing ; 1997
    In:  Japanese Journal of Applied Physics Vol. 36, No. 8R ( 1997-08-01), p. 5044-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 8R ( 1997-08-01), p. 5044-
    Abstract: Selective growth of ZnSe and ZnS on (001) GaAs substrates partially covered with SiO x was examined by metalorganic molecular-beam epitaxy. The growth temperature was the key factor for the selective growth, and the minimum growth temperature of ZnS to achieve selective growth was 450°C. On the other hand, the minimum growth temperature of ZnSe was 500°C. This difference of temperature for the selective growth made it difficult to grow high-quality ZnSe/ZnS heterostructures. To overcome this problem, we used periodic supply epitaxy to lower the selective growth temperature of ZnSe. Supply interruption after short time supply of ZnSe enhances the desorption of precursors especially on SiO x surfaces and this suppresses the nucleation of ZnSe on SiO x surfaces. The lower VI/II ratio also suppresses nucleation of ZnSe on SiO x . The selective growth of ZnSe was thus achieved at 430°C with a VI/II ratio of 1. The minimum selective growth temperature reported on ZnSe up to now is 600°C, and this work demonstrated the selective growth of ZnSe at a considerably lower temperature. We have prepared a ZnSe/ZnS single quantum well (SQW) at 450°C under the selective growth condition and the bright band edge emission from the ZnSe well was observed by photoluminescence measurement at 13 K.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.36.5044
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1997
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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  • 2
    Online Resource
    Online Resource
    Proposal on Temperature-Insensitive Semiconductor Lasers
    IOP Publishing ; 1999
    In:  Japanese Journal of Applied Physics Vol. 38, No. 8R ( 1999-08-01), p. 4764-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 8R ( 1999-08-01), p. 4764-
    Abstract: We propose temperature-insensitive semiconductor lasers which use compensation layers with negative refractive index temperature coefficients. It is theoretically shown that the maximum wavelength shift is -1.06 Å with temperature change within a range of 100 K. It is also expected that the characteristic temperature is high because the band gap of the compensation layer increases with temperature.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.38.4764
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1999
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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  • 3
    Online Resource
    Online Resource
    Semiclassical Approach in the Analysis of Ring Laser: I. Derivation of Rate Equations Including Backscattering and Interference
    IOP Publishing ; 2000
    In:  Japanese Journal of Applied Physics Vol. 39, No. 7R ( 2000-07-01), p. 3983-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 7R ( 2000-07-01), p. 3983-
    Abstract: In research on ring lasers, backscattering has been analyzed by adding phenomenological coupling terms into rate equations. However, it has been difficult to quantitatively estimate a relation between lock-in phenomena and reflection due to backscattering. Also, the phase relation between a traveling wave and its backscattered wave has not been clarified. To overcome these problems, rate equations for ring lasers have been derived here. Spatial distribution functions for electric fields and polarizations are expressed as a superposition of a traveling wave and its backscattered wave with amplitude reflectivity R as a parameter. Also, the Doppler effect and linear mode pulling are included. Consequently, it is found that interference terms, which were neglected in previous works, play an important role in the rate equations in addition to saturation terms for R 〉 0.03. The phase relation between the traveling wave and its backscattered wave is also revealed.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.39.3983
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 2000
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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  • 4
    Online Resource
    Online Resource
    Analysis of Photon Recycling in Semiconductor Ring Lasers
    IOP Publishing ; 2000
    In:  Japanese Journal of Applied Physics Vol. 39, No. 12R ( 2000-12-01), p. 6535-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 12R ( 2000-12-01), p. 6535-
    Abstract: Photon recycling in semiconductor ring lasers is theoretically analyzed. Dependence of threshold current, light output and modulation speed on photon recycling is calculated using rate equations for the carrier density and photon densities of laser mode and spontaneous emission. It is shown that photon recycling improves current versus light output characteristics and does not degrade the modulation speed. Photon recycling efficiencies for circular, square and triangular ring cavities are also examined. Although a circular structure has the largest photon recycling efficiency, it is considered that a square ring cavity, which still has a high efficiency, is the best because the number of oscillation modes is less than that of a circular one.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.39.6535
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 2000
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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  • 5
    Online Resource
    Online Resource
    Metalorganic MBE Growth of Nitrogen-doped ZnSe: TAN Doping and Nitrogen Plasma Doping
    IOP Publishing ; 1996
    In:  Japanese Journal of Applied Physics Vol. 35, No. 2S ( 1996-02-01), p. 1436-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 2S ( 1996-02-01), p. 1436-
    Abstract: Growth of ZnSe and nitrogen doping were carried out by metalorganic molecular beam epitaxy (MOMBE). In this study metalorganic precursors were introduced into the growth chamber directly without precracking. We studied two nitrogen doping techniques. First, doping with the nitrogen precursor triallylamine (TAN) was studied. It was found that TAN decomposes above 300°C by quadrupole mass spectrometry. The doping properties of TAN were critically dependent on the VI/II ratio during growth. However contrary to our expectation, the doped ZnSe films tended to be n-type. The other nitrogen-doping technique involves doping with nitrogen gas activated by an electron cyclotron resonance plasma. In the samples doped with the nitrogen plasma, donor-acceptor pair emission was dominant. The net acceptor concentration up to 2.3×10 17  cm -3 was measured in samples grown using this doping technique.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.35.1436
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1996
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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  • 6
    Online Resource
    Online Resource
    Pixels Consisting of Double Vertical-Cavity Detector and Single Vertical-Cavity Laser Sections for 2-D Bidirectional Optical Interconnections
    IOP Publishing ; 1993
    In:  Japanese Journal of Applied Physics Vol. 32, No. 1S ( 1993-01-01), p. 600-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 1S ( 1993-01-01), p. 600-
    Abstract: We have proposed a structure for optical pixels consisting of a double vertical-cavity detector and single vertical-cavity laser section. This pixel can be formed by simple fabrication processes because the structures of the detector and laser section are almost the same, and the characteristics of the laser and detector sections can be independently optimized by choosing the pair number of each distributed Bragg reflector. We have achieved a spectral bandwidth and peak absorptivity of the double vertical-cavity detector section about five times those of the single vertical-cavity laser section.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.32.600
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1993
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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  • 7
    Online Resource
    Online Resource
    Analysis of a High Density Two-Dimensional Vertical-Cavity Surface Emitting Laser Array
    IOP Publishing ; 1997
    In:  Japanese Journal of Applied Physics Vol. 36, No. 10R ( 1997-10-01), p. 6393-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 10R ( 1997-10-01), p. 6393-
    Abstract: A two-dimensional vertical-cavity surface emitting laser array is expected to be a key device for parallel lightwave transmission and optical interconnection systems. This paper analyzes the number of channels in a two-dimensional vertical-cavity surface emitting laser array, from the viewpoint of the electric power consumption and the light-output. Dependence of the number of channels on several parameters is examined. It was found that high slope efficiency and low electrical resistance lead to a large number of channels, and the contribution of threshold reduction is small if the threshold current is of the order of 100 µ A or less. It is also shown that if each channel is composed of plural elements, the number of channels increases.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.36.6393
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1997
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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  • 8
    Online Resource
    Online Resource
    Analysis of Polarization Switching Lasers
    IOP Publishing ; 1999
    In:  Japanese Journal of Applied Physics Vol. 38, No. 8R ( 1999-08-01), p. 4746-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 8R ( 1999-08-01), p. 4746-
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.38.4746
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1999
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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  • 9
    Online Resource
    Online Resource
    1.5 µm Semiconductor Wavelength Tunable Optical Filter Using a λ/4-Shifted Passive Waveguide Grating Resonator
    IOP Publishing ; 1991
    In:  Japanese Journal of Applied Physics Vol. 30, No. 10R ( 1991-10-01), p. 2519-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 30, No. 10R ( 1991-10-01), p. 2519-
    Abstract: A 1.5 µm semiconductor wavelength tunable optical filter using a λ/4-shifted passive waveguide grating resonator has been developed. Both wavelength channel number and transmissivity are analyzed with respect to grating coupling coefficient, filter length, and waveguide loss. The influence of facet reflectivity and phase-shift value on transmissivity and wavelength channel number are also investigated. A wavelength shift as wide as 42 Å is able to be obtained by carrier injection with the fabricated filter.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.30.2519
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1991
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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  • 10
    Online Resource
    Online Resource
    Semiclassical Approach in the Analysis of Ring Laser: II. Mode Coupling due to Backscattering and Interference
    IOP Publishing ; 2000
    In:  Japanese Journal of Applied Physics Vol. 39, No. 7R ( 2000-07-01), p. 3991-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 7R ( 2000-07-01), p. 3991-
    Abstract: In the research on ring lasers, the relationship between the lock-in phenomenon and backscattering was usually analyzed by treating the backscattered waves as phenomenological coupling terms. However, with these approaches, it is difficult to quantitatively estimate the relationship between lock-in phenomena and reflection due to backscattering. Also, the dependence of the coupling constant for a two-mode operation on backscattering reflection has not been described. To overcome these problems, rate equations, in which spatial distributions of the fields are expressed as superpositions of traveling wave and its backscattered wave, have been derived in our previous paper [Jpn. J. Appl. Phys. 39 (2000) 3983]. Based on these newly derived rate equations, this paper introduces a modified coupling constant, which includes backscattering reflectivity, the Doppler effect, linear mode pulling, and the interference between two modes. As a result, it is found that the Doppler effect plays an important role in the modified coupling constant which is related to lock-in phenomena. It is also shown that a weak coupling for all relative phase angles which leads to stable two-mode operations can be observed when the Doppler effect is significant. Moreover, an upper limit of reflectivity of backscattered waves to achieve stable two-mode operations is revealed quantitatively.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.39.3991
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 2000
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
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