In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 30, No. 3R ( 1991-03-01), p. 459-
Abstract:
This paper describes the study of crack propagation and mechanical fracture in GaAs-on-Si, which are closely related with the residual stress. The crack propagation is often observed as the GaAs thickness exceeds about 3 µm, and the upper limit of the number of cracks increases linearly as the GaAs thickness increases. The cracks propagate from the surface defects, where stress ten times larger than the original residual thermal stress in GaAs-on-Si exists. The mechanical fracture strength (ζ) of the GaAs-on-Si wafer decreases as the GaAs thickness increases, and becomes equal to that of the bulk GaAs at the thickness of about 3 µm due to the concentrated stress near the cracks. The back coating of SiO 2 is effective for stress relaxation, and the preliminary result of about 3×10 8 dyn/cm 2 of stress relaxation is obtained.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1991
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Permalink
