In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 3R ( 2000-03-01), p. 1371-
Abstract:
High-resolution CN(B 2 Σ + –X 2 Σ + ) emission spectra were observed for the various processes to form amorphous-CN x ( a -CN x ) films using the plasma-enhanced chemical-vapor deposition of the CN radical produced from the dissociative excitation reactions of cyanides. A strong correlation was confirmed between the electronic states of CN in the plasma and the bonding states of nitrogen atoms in the films. The 4 Σ + and 4 Π states of CN were the precursors of the one- and/or two-dimensional C=N and C–N network structures of the films with high nitrogen content, [N]/([N] +[C]) ≤0.5. The CN(X 2 Σ + ) state formed the C≡N terminations primarily, a part of which changed to the one-dimensional C=N network from the additive reactions. The above correlation was fully explained by the molecular orbitals and the electronic configurations for the relevant electronic states of CN.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.1371
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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